hexfet ? power mosfet pd - 9.1246c l generation v technology l ultra low on-resistance l p-channel mosfet l surface mount l available in tape & reel l dynamic dv/dt rating l fast switching description fifth generation hexfets from international rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. the so-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. with these improvements, multiple devices can be used in an application with dramatically reduced board space. the package is designed for vapor phase, infra red, or wave soldering techniques. power dissipation of greater than 0.8w is possible in a typical pcb mount application. irf7404 so-8 top view 8 1 2 3 4 5 6 7 d d d g s a d s s v dss = -20v r ds(on) = 0.040 w parameter max. units i d @ t a = 25c 10 sec. pulsed drain current, v gs @ -4.5v -7.7 i d @ t a = 25c continuous drain current, v gs @ -4.5v -6.7 i d @ t a = 70c continuous drain current, v gs @ -4.5v -5.4 i dm pulsed drain current ? -27 p d @t a = 25c power dissipation 2.5 w linear derating factor 0.02 w/c v gs gate-to-source voltage 12 v dv/dt peak diode recovery dv/dt ? -5.0 v/ns t j, t stg junction and storage temperature range -55 to + 150 c absolute maximum ratings a 3/10/99 thermal resistance ratings parameter typ. max. units r q ja maximum junction-to-ambient ? CCC 50 c/w www.irf.com 1
irf7404 2 www.irf.com parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage -20 CCC CCC v v gs = 0v, id = -250a d v (br)dss / d t j breakdown voltage temp. coefficient CCC -0.012 CCC v/c reference to 25c, i d = -1ma CCC CCC 0.040 v gs = -4.5v, i d = -3.2a ? CCC CCC 0.060 v gs = -2.7v, i d = -2.7a ? v gs(th) gate threshold voltage -0.70 CCC CCC v v ds = v gs , i d = -250a g fs forward transconductance 6.8 CCC CCC s v ds = -15v, i d = -3.2a CCC CCC -1.0 v ds = -16v, v gs = 0v CCC CCC -25 v ds = -16v, v gs = 0v, t j = 125c gate-to-source forward leakage CCC CCC -100 v gs = -12v gate-to-source reverse leakage CCC CCC 100 v gs = 12v q g total gate charge CCC CCC 50 i d = -3.2a q gs gate-to-source charge CCC CCC 5.5 nc v ds = -16v q gd gate-to-drain ("miller") charge CCC CCC 21 v gs = -4.5v, see fig. 6 and 12 ? t d(on) turn-on delay time CCC 14 CCC v dd = -10v t r rise time CCC 32 CCC i d = -3.2a t d(off) turn-off delay time CCC 100 CCC r g = 6.0 w t f fall time CCC 65 CCC r d = 3.1 w, see fig. 10 ? between lead tip and center of die contact c iss input capacitance CCC 1500 CCC v gs = 0v c oss output capacitance CCC 730 CCC pf v ds = -15v c rss reverse transfer capacitance CCC 340 CCC ? = 1.0mhz, see fig. 5 notes: parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) showing the i sm pulsed source current integral reverse (body diode) ? p-n junction diode. v sd diode forward voltage CCC CCC -1.0 v t j = 25c, i s = -2.0a, v gs = 0v ? t rr reverse recovery time CCC 69 100 ns t j = 25c, i f = -3.2a q rr reverse recoverycharge CCC 71 110 c di/dt = 100a/s ? t on forward turn-on time ? repetitive rating; pulse width limited by max. junction temperature. ( see fig. 11 ) ? i sd -3.2a, di/dt -65a/s, v dd v (br)dss , t j 150c ? pulse width 300s; duty cycle 2%. source-drain ratings and characteristics electrical characteristics @ t j = 25c (unless otherwise specified) intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) CCC CCC -27 CCC CCC -3.1 a i gss i dss drain-to-source leakage current l s internal source inductance CCC 4.0 CCC l d internal drain inductance CCC 2.5 CCC nh ns na a w r ds(on) static drain-to-source on-resistance s d g s d g ? surface mounted on fr-4 board, t 10sec.
irf7404 www.irf.com 3 fig 3. typical transfer characteristics fig 4. normalized on-resistance vs. temperature fig 1. typical output characteristics fig 2. typical output characteristics 1 10 100 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 t = 25c t = 150c j j gs d a -i , drain-to-source current (a) -v , gate-to-source voltage (v) v = -15 v 20s pulse w idth ds 0.1 1 10 100 1000 0.01 0.1 1 10 100 d ds 20s pulse w idth t = 150c a -i , drain-to-source current (a) -v , drain-to-source voltage (v) j vgs top - 7.5v - 5.0v - 4.0v - 3.5v - 3.0v - 2.5v - 2.0v bottom - 1.5v -1.5v 0.1 1 10 100 1000 0.01 0.1 1 10 100 d ds 20s pulse w idth t = 25c a -i , d rain-to-source c urrent (a) -v , drain-to-source voltage (v) j vgs to p - 7.5v - 5.0v - 4.0v - 3.5v - 3.0v - 2.5v - 2.0v bottom - 1.5v -1 .5 v 0.0 0.5 1.0 1.5 2.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 j t , junction temperature (c) r , d rain-to-s ource o n r es istance ds(on) (norm alized) a i = -5.3a d v = -4.5v gs
irf7404 4 www.irf.com 1 10 100 0.1 1 10 100 operation in this area limited by r ds(on) sin g le pulse t t = 150 c = 25 c j a -v , drain-to-source voltage (v) -i , drain current (a) i , drain current (a) ds d 1ms 10ms fig 7. typical source-drain diode forward voltage fig 8. maximum safe operating area fig 5. typical capacitance vs. drain-to-source voltage fig 6. typical gate charge vs. gate-to-source voltage 0.1 1 10 100 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 t = 25c t = 150c j j v = 0v gs sd sd -i , reverse drain current (a) -v , source-to-drain voltage (v) 0 1000 2000 3000 1 10 100 c, capacitance (pf) a ds -v , drain-to-source volta g e ( v ) v = 0v , f = 1mhz c = c + c , c shorted c = c c = c + c gs iss gs gd ds rss gd oss ds gd c iss c oss c rss 0 2 4 6 8 10 0 102030405060 g gs a for test circuit see figure 12 -v , gate-to-source voltage (v) q , total g ate char g e ( nc ) i = -3.2a v = -16v d ds
irf7404 www.irf.com 5 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 9. maximum drain current vs. ambient temperature fig 10b. switching time waveforms fig 11. maximum effective transient thermal impedance, junction-to-ambient v ds v gs r g r d d.u.t. -4.5v pulse w idth 1s d u ty f a c to r 0.1% v dd + - a 25 50 75 100 125 150 0.0 2.0 4.0 6.0 8.0 t , case temperature ( c) -i , drain current (a) c d
irf7404 6 www.irf.com fig 12a. basic gate charge waveform fig 12b. gate charge test circuit q g q gs q gd v g charge d.u.t. v ds i d i g -3ma v gs .3 m f 50k w .2 m f 12v current regulator same type as d.u.t. current sampling resistors + - -4.5 v
irf7404 www.irf.com 7 p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - ? ? ? r g v dd dv/dt controlled by r g i sd controlled by duty factor "d" d.u.t. - device under test d.u.t circuit layout considerations low stray inductance ground plane low leakage inductance current transformer ? * reverse polarity for p-channel ** use p-channel driver for p-channel measurements * v gs * ** peak diode recovery dv/dt test circuit [ ] [ ] fig 13. for p-channel hexfets *** v gs = 5.0v for logic level and 3v drive devices [ ] ***
irf7404 8 www.irf.com package outline so-8 outline dimensions are shown in millimeters (inches) so-8 part marking information e xam ple : this is an irf7101 date code (yww ) y = last digit of the year ww = week w afer lot code (last 4 digits) xxxx bottom part number top international rectifier log o f7101 312 k x 45 c 8x l 8x q h 0.25 (.010) m a m a 0.10 (.004) b 8x 0.25 (.010) m c a s b s - c - 6x e - b - d e - a - 8 7 6 5 1 2 3 4 5 6 5 recommended footprint 0.72 (.028 ) 8x 1.78 (.070) 8x 6.46 ( .255 ) 1.27 ( .050 ) 3x dim inches millimeters min max min max a .0532 .0688 1.35 1.75 a1 .0040 .0098 0.10 0.25 b .014 .018 0.36 0.46 c .0075 .0098 0.19 0.25 d .189 .196 4.80 4.98 e .150 .157 3.81 3.99 e .050 basic 1.27 basic e1 .025 basic 0.635 basic h .2284 .2440 5.80 6.20 k .011 .019 0.28 0.48 l 0.16 .050 0.41 1.27 q 0 8 0 8 notes: 1. dimensioning and tolerancing per ansi y14.5m-1982. 2. controlling dimension : inch. 3. dimensions are shown in millimeters (inches). 4. outline conforms to jedec outline ms-012aa. dimension does not include mold protrusions mold protrusions not to exceed 0.25 (.006). dimensions is the length of lead for soldering to a substrate.. 5 6 a1 e1 world headquarters: 233 kansas st., el segundo, california 90245, tel: (310) 322 3331 ir great britain: hurst green, oxted, surrey rh8 9bb, uk tel: ++ 44 1883 732020 ir canada: 15 lincoln court, brampton, ontario l6t3z2, tel: (905) 453 2200 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 11 451 0111 ir far east: k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo japan 171 tel: 81 3 3983 0086 ir southeast asia: 1 kim seng promenade, great world city west tower, 13-11, singapore 237994 tel: ++ 65 838 4630 ir taiwan: 16 fl. suite d. 207, sec. 2, tun haw south road, taipei, 10673, taiwan tel: 886-2-2377-9936 http://www.irf.com/ data and specifications subject to change without notice. 3/99
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